:? :?:? :?:::?:?:?:?:?:?:?:?: :?:?:?:?:?:?:?:?:?:?:?::e:w::|:a:?:?:? :w :w :?:::?:?:?:?:?:?:?:?::w :::?::w :?:?::?:?:o:?:?:w :?::?:?:o:?:w :?:?:o:?:?:?:?:?:?:e:w :?:?:w :?::?:::?:?:w :?:?:o:?:?:?:?:?:?:w :?:?:::?:?:?:w :?:?:?:w:?:?:?:w:?:?:?:?:w:o:?:?::?:?:?:w :w:w:w::?:o:?:?:?:?:?:? :w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w ::?:o:?:?:?:?:?:? b? :-:?::?:?:?:-:w :w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:-:?::?:?:?:?:- :w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w b? :?:?:?:?:?:?:?::-:?::?:?:?:-:?:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:?:?:?:?:?:?:?:?::-:?::?:?:?:?:-:?:w:w :w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w b? :?:?:::?:?:?:w:?:w:?:?:?? :?:?: :?? :?:?: :? :? :?:? @?:?:?:?:o:?:::o:?:?:w:?:?:?::?:o:?:?::::?::o::w:::?:o:?:? :?:?:?:?:?=? ::?::?:?:?:?:?: :a:e:?:1:?:? :?:?:?:?::?::?:?: :::?:? :?:e:?:? ::?:?:? :?:?::? :a:?:?:?:?:?:w::?:?:?::?:?:?:?:a :?::?::? :? ::?:::o:?:w:1::?:?:a:?:?:?:?:w::?:?:?:?:?:? :?:-:?:: :?:?:?:?:?:?? :?:?::w:?:?:?:?:?:?:w::?::::?:?:?:o:?:w::?:?::?:?:? :?:?:?:?:?::?:::?:w::?:?::?:?:?:w:?::?::?:w:?::?:?:?:w:?::?::?:?:?:w:1:e:w:::?:o:?::?:?:w:?:?:?:?:?::?:?:::?:? :w :?:?:?:w:? :? :?:? :?:?:?:?:?:?:?:?:?:?:?::e:w::|:a:?:?:?:w :?:::?:?:?:?:?:?:?:?: @?:?:e:?::o:?:?:w:?:?:?:o:?:::o:?:?:w:?:?:?:w:?:?:?::?:?:?:w:?:?:?::?:o:?:?::::?::o::w:::?:o:?:? 2 24 h is product has been designed and qualified for the consumer market. applications or uses as critical o mponents in life support devices or systems are not authorized. aos does not assume any liability arisi n u t of such applications or uses of its products. aos reserves the right to improve product design, u nctions and reliability without notice 0 5 10 15 20 25 30 012345 vds (volts) fig 1: on-region characteristics id (a) vgs=3v 3.5v 4v 4.5v 10v 0.00e+00 4.00e+00 8.00e+00 1.20e+01 1.60e+01 2.00e+01 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics id (a) 14 16 18 20 22 24 26 28 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage rds(on) (m ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics is (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance vgs=10v id=8.1a vgs=4.5v id=6a 10 20 30 40 50 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage rds(on) (m ) 25c 125c vds=5v vgs=4.5v vgs=10v id=8.1a 25c 125c
:? :?:? :?:?:?:?:?:?:?:?:?:?:?::e:w::|:a:?:?:?:w :?:::?:?:?:?:?:?:?:?: 2 24 h is product has been designed and qualified for the consumer market. applications or uses as critical o mponents in life support devices or systems are not authorized. aos dnot assume any liability arising u t of such applications or uses of its products. aos reserves the right to improve product design, u nctions and reliability without notice 0 2 4 6 8 10 048121620 q g (nc) figure 7: gate-charge characteristics vgs (volts) 0 250 500 750 1000 1250 1500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) id (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s dc rds(on) limited tj(max.)=150c ta=25c vds=15v id=8.1a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w t on t pd in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse tj(max.)=150c ta=25c 10 s
:? :?:? :?:?:?:?:?=? :?:?:?:?:?:?:?:?:?:?:?::e:w::|:a:?:?:?:w :?:::?:?:?:?:?:?:?:?: ::|:?:?:w:? :?:? :?:? :?:? :?:? :?:? :?:?:?:w ::?:?::?:w :?:?:w :?? :?:?::w:?:?:?:?:?:?:w::?::::?:?:?:o:?:w::?:?::?:?:? :?:?:?:?:?::?:::?:w::?:?::?:?:?:w:?::?::?:w:?::?:?:?:w:?::?::?:?:?:w:1:e:w:::?:o:?::?:?:w:?:?:?:?:?::?:?:::?:? :w :?:?:?:w:? :? :?:? :?:?:?:?:?:?:?:?:?:?:?::e:w::|:a:?:?:?:w :?:::?:?:?:?:?:?:?:?: @?:?:e:?::o:?:?:w:?:?:?:o:?:::o:?:?:w:?:?:?:w:?:?:?::?:?:?:w:?:?:?::?:o:?:?::::?::o::w:::?:o:?:? 0 5 10 15 20 25 30 012345 -v ds (volts) fig 16: on-region characteristics -id (a) vgs=-3v -5v -3.5v -4v -10v 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 4.5 5 -v gs (volts) figure 17: transfer characteristics -id (a) 10 15 20 25 30 35 40 0 5 10 15 20 25 -i d (a) figure 18: on-resistance vs. drain current and gate voltage rds(on) (m ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 21: body-diode characteristics -is (a) 25c 125c 0.80 1.00 1.20 1.40 1.60 0 25 50 75 100 125 150 175 temperature (c) figure 19: on-resistance vs. junction temperature normalized on-resistance vgs=-10v vgs=-4.5v id=-5.6a 10 20 30 40 50 60 345678910 -v gs (volts) figure 20: on-resistance vs. gate-source voltage rds(on) (m ) 25c 125c vds=-5v vgs=-4.5v vgs=-10v id=-7.1a 25c 125c id=-7.1a
:? :?:? :?:?:?:?:?:?:?:?:?:?:?::e:w::|:a:?:?:?:w :?:::?:?:?:?:?:?:?:?: 0 2 4 6 8 10 0 4 8 12 16 20 24 28 32 -q g (nc) figure 22: gate-charge characteristics -vgs (volts) 0 250 500 750 1000 1250 1500 1750 2000 2250 0 5 10 15 20 25 30 -vds (volts) figure 23: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 25: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 26: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -id (amps) figure 24: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s dc rds(on) limited tj(max.)=150c, ta =25c vds=-15v id=-7.1a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse tj(max.)=150c ta=25c 10 s t on t pd
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